Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1682289 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2012 | 4 Pages |
Abstract
In this work we have studied the radiation effects on MOSFET electronic devices. The integrated circuits were exposed to 10 keV X-ray radiation and 2.6 MeV energy proton beam. We have irradiated MOSFET devices with two different geometries: rectangular-gate transistor and circular-gate transistor. We have observed the cumulative dose provokes shifts on the threshold voltage and increases or decreases the transistor’s off-state and leakage current. The position of the trapped charges in modern CMOS technology devices depends on radiation type, dose rate, total dose, applied bias and is a function of device geometry. We concluded the circular-gate transistor is more tolerant to radiation than the rectangular-gate transistor.
Keywords
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Authors
M.A.G. Silveira, K.H. Cirne, R.B.B. Santos, S.P. Gimenez, N.H. Medina, N. Added, M.H. Tabacniks, M.D.L. Barbosa, L.E. Seixas, W. Melo, J.A. de Lima,