Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1682375 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2015 | 4 Pages |
Abstract
An ion beam treatment of high purity single crystal silicon specimens was performed with different shots by the irradiation of intense pulsed ion beams (IPIB), which were generated by an accelerating voltage of 350 kV and with the current density of 130 A/cm2. As the result of irradiation, the formation of various microstructures caused by the irradiation effect, especially the thermal effect is confirmed by SEM and XRD analysis, and the corresponding processes are described and related explanations are given.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Jie Shen, Xiao Yu, Yanyan Zhang, Haowen Zhong, Jie Zhang, Miao Qu, Sha Yan, Gaolong Zhang, Xiaofu Zhang, Xiaoyun Le,