| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1682404 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2015 | 4 Pages |
Abstract
Evolution of the non-radiative and radiative recombination in GaN and CdS 2.5–20 μm thick layers has been examined by the in situ measurements of the 1.6 MeV proton induced luminescence and laser excited photoconductivity characteristics. The introduction rate of radiation defects has been evaluated by the comparative analysis of the laser and proton beam induced luminescence for the examined GaN and CdS layers.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
E. Gaubas, T. Ceponis, J. Pavlov, A. Tekorius,