Article ID Journal Published Year Pages File Type
1682405 Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2015 5 Pages PDF
Abstract

The pulsed characteristics of the capacitor-type and PIN diode type detectors based on GaN have been simulated using the dynamic and drift–diffusion models. The drift–diffusion current simulations have been implemented by employing the commercial software package Synopsys TCAD Sentaurus. The bipolar drift regime has been analyzed. The possible internal gain in charge collection through carrier multiplication processes determined by impact ionization has been considered in order to compensate carrier lifetime reduction due to radiation defects introduced into GaN material of detector.

Related Topics
Physical Sciences and Engineering Materials Science Surfaces, Coatings and Films
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