Energy filter for tailoring depth profiles in semiconductor doping application

This work presents the physics and technology of a micromechanically fabricated “energy filter” for doping applications. This energy filter is capable of producing pre-defined tailored doping profiles by a single monoenergetic ion implantation. The functional principle of the energy filter is explained using a simple model. Pattern transfer is being investigated for two different filter-substrate distances. Different aspects of the filter’s temperature behavior during irradiation are discussed. Finally, the results of an entire wafer area implantation are presented and discussed.