| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1682477 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2012 | 9 Pages |
Abstract
The radiation emission phenomena in bent silicon crystals have been thoroughly investigated at the CERN SPS-H4 beamline. The incoming and outgoing trajectories of charged particles impinging on a silicon strip crystal have been reconstructed by high precision silicon microstrip detectors. A spectrometer method has been exploited to measure the radiation emission spectra both in volume reflection and in channeling. The theoretical method used to evaluate the photon spectra is presented and compared with the experimental results.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
D. Lietti, E. Bagli, S. Baricordi, A. Berra, D. Bolognini, P.N. Chirkov, P. Dalpiaz, G. Della Mea, D. De Salvador, S. Hasan, V. Guidi, V.A. Maisheev, A. Mazzolari, M. Prest, E. Vallazza, D. Vincenzi, I.A. Yazynin,