Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1682501 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2013 | 5 Pages |
Abstract
Thermal annealing of irradiated LiF crystals with Φ ⩾ 1013 ions/cm2 at 400 K leads to a decrease of F centers (due to annihilation with H centers) and an enhancement of complex Fn color centers (neutral and charged) due to interaction with thermally activated anion vacancies. Annealing LiF crystals at higher temperature (T ⩾ 400 K) leads to a decrease both of F centers and Fn centers. In the annealing process up to 480 K the F2 and F3+ centers are dominating until their reduction above 590 K. At temperatures above 740 K mainly small Li and trace element (Mg, Na) colloids are present in the absorption spectrum. The role of anion vacancies on color center creation and annealing is discussed.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
A. Dauletbekova, K. Schwartz, M.V. Sorokin, J. Maniks, A. Rusakova, M. Koloberdin, A. Akilbekov, M. Zdorovets,