| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1682510 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2011 | 6 Pages |
Abstract
The effect of annealing on defects and the formation of Xe bubbles were investigated in zirconium oxycarbide implanted with 800-keV136Xe2+ ions at two fluences 1 × 1015 and 1 × 1016 Xe/cm2. Doppler broadening technique combined with slow positron beam was used. The analysis of the S depth profiles and S–W maps revealed that in the as-implanted samples at both fluences Xe bubbles are not formed. The post-implantation annealing of the samples implanted at 1 × 1016 Xe/cm2 caused formation of Xe bubbles. The response of the lower implantation dose samples to this post implantation annealing was found rather complicated and is discussed.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
N. Djourelov, G. Gutierrez, H. Marinov, E. Popov, N. Toulhoat, N. Moncoffre, Y. Pipon, P. Nédélec,