Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1682780 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2011 | 5 Pages |
Abstract
Cobalt ions were implanted into GaN films with multiple energies between 50 keV and 380 keV with two total fluences, 1.25 Ã 1016 and 1.25 Ã 1017 cmâ2, followed by annealing at temperatures between 600 and 850 °C. The crystal quality and surface morphology of as-implanted and subsequently annealed films were investigated by X-ray diffraction (XRD) 2θ scans, Ï-rocking curve measurements and atomic force microscopy (AFM). The profiles of impurities and defects were analyzed by Rutherford backscattering spectrometry (RBS) in random and channeling configurations. The virgin GaN films have an excellent crystal quantity (Ïmin = 1.4%) and in the implanted samples 60% disorder induced by ion implantation was recovered after annealing. The annealed sample become ferromagnetic, with a spontaneous magnetization of 0.1 emu/g and a coercive magnetic field of 100 Oe at 10 K, and the Curie point was found to be higher than room temperature.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
J. He, Z.S. Wang, M. Li, D.J. Fu,