| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1682861 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2011 | 4 Pages |
Abstract
Pre-amorphized silicon wafers are implanted with 30Â keV C60+ and 0.5Â keV C+ ions at room temperature with fluences about 2Â ÃÂ 1015Â atoms/cm2. The depth profiles of implanted carbon are measured using high-resolution Rutherford backscattering spectroscopy. The observed average depth of C for the C60+ implantation is 6.1Â nm while that for the C+ implantation is 4.0Â nm, showing a large cluster effect on the projected range.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Y. Morita, K. Nakajima, M. Suzuki, K. Narumi, Y. Saitoh, W. Vandervorst, K. Kimura,