Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1683020 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2011 | 5 Pages |
Abstract
The temperature effect on the microstructure of the N+-ion implantation-induced Si3N4 buried layer was investigated. The underlying silicon nitride layers were formed in a Si (1 1 1) wafer after implantation of 50 keV nitrogen ions (fluence: 1 Ã 1017, 2 Ã 1017 and 5 Ã 1017 ions/cm2). It was observed that a continuous amorphous layer of about 200 nm thickness was formed in all implanted samples due to the irradiation damage. After 30 min annealing at 900 °C, poly-crystalline Si3N4 products were found by TEM examination in the specimen implanted with 5 Ã 1017 ions/cm2 dose. In the case of annealing at 1200 °C a continuous single-crystalline α-Si3N4 buried layer was formed indicating that the amorphous layer in the implanted samples could be transformed into three successive layers, which are amorphous SiO2, single-crystal α-Si3N4 and retained defects from surface to inner substrate, respectively.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Rong Tan Huang, J.Y. Hsu, J.W. Huang, Y.C. Yu,