Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1683021 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2011 | 5 Pages |
Abstract
In this study, B1- monomer and B4- cluster ions of the same boron kinetic energy level per atom (20 keV/atom) and total atomic fluence (2 Ã 1015 atoms/cm2) were implanted into silicon wafers held at liquid nitrogen temperature (LT, â196 °C), and followed by a two-step furnace annealing together with rapid thermal annealing treatment. The characteristics of radiation damage in both the as-implanted and as-annealed specimens were probed using Raman scattering spectroscopy (RSS) as well as transmission electron microscopy (TEM). Both the RSS and TEM results revealed that heavily-damaged and amorphous structures are formed in the as-implanted B1 and B4 specimens, respectively, mainly due to the so-called non-linear damage effect existed in the latter. Furthermore, there is less radiation damage remained in the as-annealed B4 specimens when compared to the as-annealed B1 ones, resulting from the occurrence of solid phase epitaxial growth (SPEG) in the amorphous layer of the former which thus causes significant removal of radiation damage.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
J.H. Liang, Y.Z. Chen, C.M. Lin,