| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1683069 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2008 | 6 Pages |
The effects of composition and structure on hydrogen incorporation in tungsten oxide films were investigated. Films were deposited on carbon and SiO2 substrates using a reactive sputtering by varying the substrate temperature from 30 to 600 °C in argon and oxygen mixture. The films were characterized using X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), elastic recoil detection analysis (ERDA) and Raman scattering. XRD patterns showed amorphous structure in the films deposited below 400 °C and (0 1 0) oriented monoclinic WO3 in the films deposited beyond 400 °C. The results of RBS and ERDA indicated that hydrogen concentration in the amorphous films increased from 0.1 to 0.7 H/W with changing the composition from WO0.25 to WO3. The hydrogen concentration in WO3 films decreased to 0.4 H/W with increasing the substrate temperature during deposition. The Raman spectra of the WO3 films revealed that decreasing of W6+O terminals was related to decreasing of the hydrogen concentration. It was considered that the incorporated hydrogen in tungsten oxide films was bonded at the end of W6+O terminals.
