| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1683151 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2011 | 5 Pages |
Abstract
Atomistic computer simulations based on analytical potentials are employed to investigate the response of a hexagonal boron nitride monolayer to irradiation with noble gas ions having energies from 35 eV up to 10 MeV. Probabilities for creating different types of defects are calculated as functions of ion energy and incidence angle, along with sputtering yields of boron and nitrogen atoms. The presented results can be used for the optimization of ion processing of single-layer and bulk hexagonal boron nitride samples and for predicting the evolution of the material in radiation hostile environments.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
O. Lehtinen, E. Dumur, J. Kotakoski, A.V. Krasheninnikov, K. Nordlund, J. Keinonen,