| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1683184 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2011 | 5 Pages |
Abstract
The diffusion of hydrogen in amorphous silicon formed by ion implantation is studied using real-time elastic recoil detection analysis. An activation energy for H diffusion of 1.82Â eV is determined in a single ramped anneal. This activation energy is consistent with diffusion studies in the high H concentration regime. The low beam current employed is found to have a negligible influence on the H diffusion within the sensitivity of the measurement. Further refinements for increased accuracy of this technique are discussed.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
D. Smeets, B.C. Johnson, J.C. McCallum, C.M. Comrie,