Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1683199 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2014 | 6 Pages |
Abstract
Cross-sectional transmission electron microscopy (XTEM) was used to study the effects of irradiation with swift heavy ions on helium-implanted silicon. ã1Â 0Â 0ã-oriented silicon wafers were implanted with 30Â keV helium to a dose of 3Â ÃÂ 1016Â He+/cm2 at 600Â K. Subsequently, the helium-implanted Si wafers were irradiated with 792Â MeV argon ions. The He bubbles and extended defects in the wafers were examined via XTEM analysis. The results reveal that the mean diameter of the He bubbles increases upon Ar-ion irradiation, while the number density of the He bubbles decreases. The microstructure of the He bubbles observed after Ar-ion irradiation is comparable to that observed after annealing at 1073Â K for 30Â min. Similarly, the mean size of the extended defects, i.e., Frank loops, increases after Ar-ion irradiation. Possible mechanisms are discussed.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
B.S. Li, Y.Y. Du, Z.G. Wang, T.L. Shen, Y.F. Li, C.F. Yao, J.R. Sun, M.H. Cui, K.F. Wei, H.P. Zhang, Y.B. Shen, Y.B. Zhu, L.L. Pang,