| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1683298 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2011 | 6 Pages |
Abstract
Nano-bubbles or voids introduced by He implantation before the oxygen implantation collect oxygen and increase the oxygen content in the sample. Furthermore, nano-bubbles or voids can trap Si interstitials to decrease the dislocations at the edge of precipitates. The density and shape of precipitates formed in the initial stage of the separation-by-implanted-oxygen process are related to the size and density of He-induced vacancy-type defects (nano-bubbles and voids). A high density of nano-bubbles is more efficient in gettering than that of a low density of voids.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
B.S. Li, C.H. Zhang, H.H. Zhang, Y. Zhang, Y.T. Yang, L.Q. Zhang,