| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1683316 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2010 | 4 Pages |
Abstract
We have compared the microstructural evolution of helium bubbles under ion irradiation and high temperature annealing. 4H–SiC was irradiated first by 140 keV He ions to a fluence of 1.0 × 1017 cm−2 and then annealed at 1200 K for 30 min. Then, the samples were either irradiated by 2 MeV He ions to a fluence of 3.0 × 1016 cm−2 at room temperature or annealed additionally at 1200 K for 30 min. Before and after 2 MeV He ion irradiation, significant microstructural changes were observed, similar to effects of high temperature annealing. Thus, the study provides evidence of ion-irradiation-induced athermal annealing on defect Ostwald ripening process and bubble evolution. Possible mechanisms are discussed.
Related Topics
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Authors
Wei Hua, Shu-De Yao, N. David Theodore, Xue-Mei Wang, Wei-Kan Chu, Michael Martin, Lin Shao,