Properties of InAs grown on misoriented GaAs substrates by atmospheric pressure metal–organic vapor phase epitaxy

InAs epilayers were grown by atmospheric pressure metal–organic vapor phase epitaxy on GaAs (1 0 0) exactly oriented substrates and misoriented by 2° and 10° toward [1 1 1]A. The layers had varying thicknesses and were deposited under the same growth conditions. Atomic force microscopy analysis show that surface morphology depends on surface misorientation and presents a low root mean square. High resolution X-ray diffraction analysis and Hall effect measurements were preformed to check the substrate misorientation effect on the crystalline quality and electrical properties respectively.