| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1683733 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2010 | 5 Pages |
Abstract
An X-ray absorption spectroscopic investigation into the electronic and optical properties of silicon nanocrystals (Si-NCs) derived from the thermal processing of hydrogen silsesquioxane (HSQ) is presented. Hydrofluoric (HF) acid etching and subsequent photochemical hydrosilylation with styrene liberates the as-synthesized oxide-embedded Si-NCs from their matrix and renders them solution dispersible through the formation of surface Si–C bonds. The impact of this process on the photoluminescence behavior exhibited by these materials has been studied through near edge X-ray absorption fine structure (NEXAFS) and X-ray excited optical luminescence (XEOL) spectroscopies.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Joel A. Kelly, Eric J. Henderson, Colin M. Hessel, Ronald G. Cavell, Jonathan G.C. Veinot,