| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1683833 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2010 | 5 Pages |
Abstract
The modifications induced in silicon samples by helium implantation before and after isothermal annealing at 673Â K have been investigated. The surface morphology has been detected by atomic force microscopy. A hillock structure is observed on the sample surface before and after annealing for 5-10Â min. Surface blister formation is observed with an increasing annealing time. The variation of crystal damage with annealing time has been investigated by Rutherford backscattering/channeling. The intensity of the damage peak first increases with annealing time, reaches maximum at an annealing time of 60Â min and then decreases. Helium-induced bubbles and residual defects have been observed by transmission electron microscopy, which shows that dislocations are close to the bubbles.
Related Topics
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Authors
B.S. Li, C.H. Zhang, H.H. Zhang, Y.T. Yang, L.H. Zhou, L.Q. Zhang, Y. Zhang,