Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1683887 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2009 | 4 Pages |
Abstract
The Doppler broadening spectrum of a silicon wafer was measured using a variable-energy positron beam to investigate the effects of vacancy-type defects induced by 180Â keV Ar ion implantation. The S-parameter in the damaged layer decreases with annealing temperature up to 673Â K, and then increases with annealing temperature from 673 to 1373Â K. At low annealing temperatures ranging from room temperature to 673Â K, argon-decorated vacancies are formed by argon atoms combining with open-volume defects at inactive positron sites. With further increase of annealing temperature, argon-decorated vacancies dissociate and subsequently migrate and coalesce, leading to an increase of S-parameter. Furthermore, the buried vacancy-layer becomes narrow with increasing annealing temperature. At 1373Â K, the buried vacancy-layer moved towards the sample surface.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
B.S. Li, C.H. Zhang, Y.R. Zhong, D.N. Wang, L.H. Zhou, Y.T. Yang, H.H. Zhang, L.Q. Zhang,