| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1683912 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2009 | 4 Pages |
Abstract
We report on progress in ion placement into silicon devices with scanning probe alignment. The device is imaged with a scanning force microscope (SFM) and an aligned argon beam (20 keV, 36 keV) is scanned over the transistor surface. Holes in the lever of the SFM tip collimate the argon beam to sizes of 1.6 μm and 100 nm in diameter. Ion impacts upset the channel current due to formation of positive charges in the oxide areas. The induced changes in the source–drain current are recorded in dependence of the ion beam position with respect to the FinFET. Maps of local areas responding to the ion beam are obtained.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
C.D. Weis, A. Schuh, A. Batra, A. Persaud, I.W. Rangelow, J. Bokor, C.C. Lo, S. Cabrini, D. Olynick, S. Duhey, T. Schenkel,