Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1683917 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2009 | 4 Pages |
Abstract
We report on secondary defect evolution in a multilayered Si/SiGe structure after 1Â MeV Sn+-ion implantation to a fluence of 2Â ÃÂ 1014Â cmâ2 followed by thermal annealing in a dry nitrogen atmosphere. Formation of a buried amorphous layer is registered after ion implantation. Thermal treatment leads to formation of dislocation loops in an EOR-defect band, and a mixture of tangle dislocations and “clamshell” defects at the depth of 200-500Â nm. In addition, self-assembling of voids in a near-surface SiGe layer structure is observed. The voids are of nanometer size and are preferably located in thin SiGe layers. The results are discussed in terms of the separation of the vacancy and interstitial depth profiles attributed to the preferential forward momentum of recoiling Si atoms. The compressively strained SiGe layers play the role of vacancy accumulator, prevent in-surface diffusion of vacancies and, in this way, result in self-assembling of voids inside compressively strained SiGe layers.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
P.I. Gaiduk, A. Nylandsted Larsen, W. Wesch,