Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1683930 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2009 | 5 Pages |
Abstract
The chemical variation and depth profile of silicon carbide implanted with nitrogen and overgrown with epitaxial layer has been studied using X-ray photoelectron spectroscopy (XPS). The results of this study have been supplemented by transmission electron microscopy (TEM) imaging and electron energy loss-spectroscopy (EELS) in an attempt to correlate the chemical and structural information. Our results indicate that the nitrogen implantation into silicon carbide results in the formation of the Si-C-N layer. XPS revealed significant change in the bonding structure and chemical states in the implanted region. XPS results can be interpreted in terms of the silicon nitride and silicon carbonitride nanocrystals formation in the implanted region which is supported by the electron microscopy and spectroscopy results.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Alexandra A. Suvorova, Tim Nunney, Alexander V. Suvorov,