| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1683972 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2009 | 4 Pages |
In this study, we compare and discuss the defect behavior of sapphire single crystals implanted with different fluences (1 × 1016–1 × 1017 cm−2) of carbon and nitrogen with 150 keV. The implantation temperatures were RT, 500 °C and 1000 °C to study the influence of temperature on the defect structures. For all the ions the Rutherford backscattering-channeling (RBS-C) results indicate a surface region with low residual disorder in the Al-sublattice. Near the end of range the channeled spectrum almost reaches the random indicating a high damage level for fluences of 1 × 1017 cm−2. The transmission electron microscopy (TEM) photographs show a layered contrast feature for the C implanted sample where a buried amorphous region is present. For the N implanted sample the Electron Energy Loss Spectroscopy (EELS) elemental mapping give evidence for the presence of a buried damage layer decorated with bubbles. Samples implanted at high temperatures (500 °C and 1000 °C) show a strong contrast fluctuation indicating a defective crystalline structure of sapphire.
