| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1683977 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2009 | 5 Pages |
Abstract
The interface reactions in an epitaxial 10 nm-thick Fe3O4/MgO(0 0 1) film were investigated by using Rutherford Backscattering spectrometry (RBS), channeling (RBS-C) and X-ray reflectometry (XRR). The as-grown film had a good crystallinity indicated by the minimum yield and the half-angle value for Fe, respectively, χmin(Fe) = 22% and ψ1/2(Fe) = 0.62°. Annealing the films under partial argon pressure up to 600 °C led to a large enhancement of Mg out-diffusion into the film forming a wustite-type phase, but the total layer thickness did not change much. Ion irradiation of the film by 1 MeV Ar ion beam caused a strong Fe ion mixing resulting in a large interfacial zone with a thickness of 23 nm.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
N.-T.H. Kim-Ngan, A.G. Balogh, J.D. Meyer, J. Brötz, S. Hummelt, M. Zając, T. Ślęzak, J. Korecki,