| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1683996 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2009 | 4 Pages |
Abstract
The impact of the gate implantation on properties of N2O-nitrided thermal oxides MOS dielectric layers were evaluated in this study via current-voltage, j-ramp and current-temperature techniques. The data obtained show that implantation with boron of poly-Si gates can result in generation of border traps in oxides. The energy position of traps generated in the oxides after Fowler-Nordheim voltage stress and after hard breakdown treatments were evaluated.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
O.V. Naumova, B.I. Fomin, N.V. Sakharova, M.A. Ilnitsky, V.P. Popov,