Article ID Journal Published Year Pages File Type
1683998 Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2009 4 Pages PDF
Abstract
Electrical properties of Si-implanted n-type GaN/AlGaN/GaN layers and contact resistances of ohmic electrodes (TiAl) formed on these layers have been examined. Experimental results have clearly shown that ohmic electrodes with a low specific-contact resistance of 1.4 × 10−7 Ω cm2 can be fabricated on the n-type layer having a low sheet resistance of 145 Ω/sq, which has been formed by the dual-energy Si ion implantation (80 keV:1.01 × 1015/cm2 + 30 keV:1.6 × 1014/cm2) and subsequent annealing at 1200 °C for 2 min using a Si3N4 layer as an encapsulant.
Related Topics
Physical Sciences and Engineering Materials Science Surfaces, Coatings and Films
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