Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1683998 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2009 | 4 Pages |
Abstract
Electrical properties of Si-implanted n-type GaN/AlGaN/GaN layers and contact resistances of ohmic electrodes (TiAl) formed on these layers have been examined. Experimental results have clearly shown that ohmic electrodes with a low specific-contact resistance of 1.4 Ã 10â7 Ω cm2 can be fabricated on the n-type layer having a low sheet resistance of 145 Ω/sq, which has been formed by the dual-energy Si ion implantation (80 keV:1.01 Ã 1015/cm2 + 30 keV:1.6 Ã 1014/cm2) and subsequent annealing at 1200 °C for 2 min using a Si3N4 layer as an encapsulant.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Tomohisa Shiino, Tomohiro Saitoh, Tohru Nakamura, Taroh Inada,