Damage induced by high energy multiply charged oxygen ions in oxide coated silicon

P-type oxide coated silicon samples of resistivity 120 Ω cm were irradiated with 60 MeV oxygen ions of fixed charge states 4+, 5+, 6+ and 7+ at an equal fluence of, ϕ, ∼1013 ions/cm2. The induced damage was estimated by Hall voltage, Hall coefficient, carrier concentration and lifetime of minority carriers. The results indicate that Hall voltage (VH) and Hall coefficient (RH) increases, while carrier concentration (n) decreases with the charge state of impinging oxygen ions. The VH increases from 22 mV to 76.5 mV at typical current of 0.5 mA, RH from 0.42 × 105 cm3/C to 2.16 × 105 cm3/C and n decreases from 9 × 1013 cm−3 to 2.88 × 1013 cm−3 for the different charge states. This fact is an evidence that the oxygen ions with an individual fixed charge state passing through very thin 40 Å layer of silicon dioxide, induces significant damage at the SiO2-Si interface through the mechanism of electronic stopping power. The lifetime of minority charge carriers, τ (bulk property), remains constant at around 6 μs for all the charge states of the 60 MeV energy oxygen ion irradiated samples at a constant fluence of, ϕ, 1013 ions/cm2.