| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1684203 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2010 | 5 Pages |
Abstract
A Monte Carlo code for simulations of ion channeling in crystals containing extended defects has been developed. A bent channel model of lattice distortions produced by dislocations has been used for defect analysis in ion implanted GaN. To test the code, the energy dependence of the dechanneling parameter has been calculated for crystals containing randomly displaced atoms and bent channels. It follows the 1/E and E1/2 dependence, respectively.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
A. Turos, L. Nowicki, A. Stonert, K. Pagowska, J. Jagielski, A. Muecklich,