Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1684288 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2010 | 4 Pages |
Abstract
In this work, (α,α) and (α,p0) reactions are applied to study depth distributions of 70 keV 28Si+ ions implanted in 200 nm SiO2 layers with fluences of 1 Ã 1017 and 2 Ã 1017 cmâ2. Analysis is performed above ER = 3864 keV to take advantage of resonances in both (α,α) and (α,p0) cross-sections. We show how (α,p0) reactions can complement results provided by resonant backscattering measurements in this complex case.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
J. Demarche, M. Yedji, G. Terwagne,