Furthering the understanding of ion-irradiation-induced electrical isolation in wide band-gap semiconductors

A model recently developed for ion-irradiation-induced electrical isolation of GaN is extended to describe this process in other wide band-gap semiconductors. In our model, a decrease in the concentration of free carriers responsible for isolation is assumed to be due to the formation of complexes of ion-beam-generated point defects with shallow donor or acceptor dopants. Results show that this model can adequately describe experimental data for electrical isolation not only in n-GaN but also in n-ZnO as well as in n- and p-InGaP.