| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1684338 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2006 | 6 Pages |
Abstract
The concentration of 11B+ in silicon has been determined by a number of different analytical techniques. Several commercial vendors provided silicon wafers implanted with 11B+ ions over a wide range of fluence (4 × 1013– 3 × 1016 11B/cm2) and energy (300 eV–10 keV) for evaluation. The techniques used in this evaluation included the following: Elastic recoil detection (ERD) using 12 MeV F4+ ions, nuclear reaction analysis (NRA) using the 11B(p,α)8Be* reaction and secondary ion mass spectroscopy (SIMS). The accuracy and potential drawbacks of each of these techniques is discussed.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
J.L. Duggan, F. Naab, K. Hossain, O.W. Holland, F.D. McDaniel, J.J. Xu, Z.Y. Zhao, B.N. Guo, J. Liu, K.H. Shim, U. Jeong,