Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1684437 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2010 | 4 Pages |
Abstract
ZnO thin films have been deposited on Si substrates by reactive ion beam sputtering deposition utilizing a capillaritron ion source. All the as-deposited ZnO films exhibit a preferred (0Â 0Â 2) growth direction while the grain size increases as oxygen partial flow rate increases. An optimum photoluminescence result was achieved using oxygen partial flow rate of â¼40% that the ratio of integrated deep level emission to that of integrated near-band-edge emission is less than 1.5. The atomic percentage ratio of Zn:O remains at 55/45, regardless of oxygen partial flow rates. With the applied substrate bias, the atomic percentage ratio of Zn/O changes to 40/60, indicating that stoichiometric ZnO may be achieved by selecting appropriate substrate bias. With the substrate bias applied, increased amount of oxygen atoms were found located in oxygen deficient matrixes, likely due to the bombardment of secondary ions.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Liang-Chiun Chao, Syuan-Jhuh Lin, Wan-Chun Chang,