| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1684482 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2009 | 4 Pages |
Abstract
The depth profiles of lattice strain near the interface regions of LaAlO3/Si and the SiO2 interfacial layer/Si were investigated by the ion channeling technique using high-resolution Rutherford backscattering spectroscopy (HRBS). In the case of the LaAlO3/Si stack, horizontal tensile strain in the Si near the interface was clearly observed. However, this strain was relaxed by formation of the interfacial layer through annealing in an oxygen ambient. These results suggest that the strain in Si induced by a dielectric strongly depends on the material in contact with Si.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
M. Suzuki, M. Koyama,