| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1684554 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2006 | 4 Pages |
Silicon nitride films were formed by pulsed reactive closed-field unbalanced magnetron sputtering of high purity Si targets in an Ar–N2 mixture. The effects of N2 fraction on the chemical composition, and tribological and wetting behaviors were investigated. The films deposited at a high N2 fraction were consistently N-rich. The surface microstructure changed from continuous granular surrounded by tiny void regions to a homogeneous and dense microstructure, and densitied as the N2 fraction is increased. The as-deposited films have a relatively low friction coefficient and better wear resistance than 316L stainless steel under dry sliding friction and experienced only abrasive wear. The decreased surface roughness and increased nitrogen incorporation in the film give rise to increased contact angle with double-stilled water from 24° to 49.6°. To some extent, the silicon nitride films deposited are hydrophilic in nature.
