| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1684570 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2006 | 4 Pages |
Metal-ion implantation followed by thermal oxidation was carried out to fabricate zinc-oxide (ZnO) nanoparticles (NPs) in silica glass (SiO2). A SiO2 substrate was implanted with Zn+ ions of 60 keV up to 1.0 × 1017 ions/cm2. In the as-implanted state, the sample shows a strong absorption peak at ∼4.8 eV and a weak one at ∼1.2 eV due to Zn metallic NPs. After annealing in oxygen gas at 700 °C for 1 h, the absorption in the visible region disappears and a new absorption edge appears at ∼3.25 eV. The grazing incidence X-ray diffraction (GXRD) confirms the formation of ZnO NPs. The ZnO NPs show a photoluminescence (PL) peak at 3.32 eV under pulsed nitrogen-laser excitation at 3.68 eV. Annealing at 900 °C induces an additional shift of the absorption edge to ∼5.3 eV. The additional shift indicates the formation of a Zn2SiO4 phase which was confirmed by GXRD.
