Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1684576 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2006 | 4 Pages |
Abstract
Extended X-ray absorption fine structure and Raman spectroscopies have been used to compare the crystalline-to-amorphous phase transformation in nanocrystalline and polycrystalline Ge. We demonstrate Ge nanocrystals are extremely sensitive to ion irradiation and are rendered amorphous at an ion dose ∼40 times less than that required to amorphise bulk, crystalline standards. This rapid amorphisation is attributed to the higher-energy nanocrystalline structural state prior to irradiation, inhibited Frenkel pair recombination when Ge interstitials are recoiled into the matrix and preferential nucleation of the amorphous phase at the nanocrystal/matrix interface.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
M.C. Ridgway, G. de M. Azevedo, R.G. Elliman, W. Wesch, C.J. Glover, R. Miller, D.J. Llewellyn, G.J. Foran, J.L. Hansen, A. Nylandsted Larsen,