| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1684624 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2006 | 4 Pages |
Abstract
Time-resolved photoluminescence measurements are undertaken to determine the passivation kinetics of luminescence-quenching defects during isothermal and isochronal annealing in molecular and atomic hydrogen. The latter employs an alneal process in which atomic hydrogen is generated by reactions between a deposited Al layer and H2O or –OH radicals in the SiO2. Passivation and desorption kinetics are shown to be consistent with the existence of two classes of non-radiative defects: one that reacts with either atomic or molecular hydrogen, and the other that reacts only with atomic hydrogen.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
A.R. Wilkinson, R.G. Elliman,