| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1684630 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2006 | 4 Pages |
Abstract
N-doped carbon films were prepared on Si(1 0 0) and Ti–6Al–4V substrates using direct current magnetically filtered cathodic arc deposition (DC-MFCAD) at room temperature for various different N2 pressures. The structure and composition of the films were characterized by Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Ball-on-disk and microhardness tests were used to characterize the mechanical properties of the films, and Hall effect tests were employed to study the electrical properties.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
F. Wen, N. Huang, Y.X. Leng, J. Wang, H. Sun, Y.J. Li, Z.W. Wang,