| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1684768 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2007 | 4 Pages |
Abstract
The dynamics of the nanosecond laser annealing of the implanted silicon by probing the implanted layer with infrared radiation (1.06 μm) in the conditions of the total internal reflection is investigated. The obtained experimental data are compared with the results of computer simulation of the studied processes. The data characterizing the contributions of intrinsic absorption of the probing beam and the absorption on free carriers generated in Si by laser radiation are obtained. The temperature dependence of the intrinsic absorption coefficient in Si during high-temperature heating is estimated.
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Authors
G.D. Ivlev, E.I. Gatzkevich, R.M. Bayazitov, R.I. Batalov, I.B. Khaibullin,