| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1684769 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2007 | 5 Pages |
Abstract
In this paper, we present preliminary results of a deep level transient spectroscopy study of the charge traps produced as a function of implantation angle for 70 keV H ions implanted into n-type Si(1 0 0) crystals. The defect types, concentrations and their depth profiles are examined as a function of implantation angle. The experimental results are also compared to the vacancy profiles predicted by the Monte-Carlo binary collision code, Crystal-TRIM. The results of this light ion study are compared and contrasted with those of previous studies.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
B.J. Villis, J.C. McCallum,