| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1684773 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2007 | 5 Pages |
Abstract
The mechanisms involved in helium migration in α-SiC are investigated through the evolution of its microstructure and of the concentration profiles following annealing at 1300 °C/30 min for fluences of 1 and 5 × 1015 3He cm−2 and a He implantation energy of 500 keV. Helium profiling is performed using the 3He(d,α)1H NRA technique with an improved detection limit of 5 at ppm. The NRA and TEM techniques clearly show that depending on the initial fluence, a proportion of the helium is trapped within the grain and a part of the helium is released. Analysis of the helium profile changes after annealing enabled to determine a value of the volume diffusion coefficient close to (8 ± 1) × 10−17 m2 s−1 for both fluences studied.
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Authors
T. Sauvage, G. Carlot, G. Martin, L. Vincent, P. Garcia, M.F. Barthe, A. Gentils, P. Desgardin,