Epitaxial recrystallization of amorphous Si layers by swift heavy ions

Epitaxial recrystallization of 200 nm amorphous Si layers by swift heavy ions (50 and 100 MeV Au8+) and the role of electronic energy loss was investigated by Rutherford backscattering spectrometry and Micro-Raman spectroscopy. We observed good epitaxial crystallization in the range of 473–673 K, which is a much lower temperature regime as compared to the one needed for conventional solid phase epitaxial growth. Planar recrystallization has been observed as a function of temperature giving rise to an activation energy of 0.26 ± 0.02 eV. A considerable amount of stress still remains even after full epitaxy at 673 K implantation. A possible mechanism of recrystallization is discussed on the basis of the production of vacancies along the track of the swift heavy ion and their migration at elevated temperatures.