| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1684791 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2007 | 4 Pages |
Schottky barrier diodes (SBD’s) were fabricated with 20/80/40/80 nm Ti/Al/Pt/Au ohmic contacts on the O face and circular 0.5 mm in diameter, 50 nm thick Ru Schottky contacts in the Zn face. Current (I) deep level transient spectroscopy (I-DLTS) was used to study the shallow level defects introduced during 1.8 MeV proton irradiations with fluences ranging from 1 × 1013 cm−2 to 2.4 × 1014 cm−2. These measurements revealed that this irradiation introduced a defect with an energy level at 0.03–0.036 eV below the conduction band and with an electron capture cross section of 9 × 10−16 to about 1.4 × 10−15 cm2. This defect may be hydrogen-related as theory has predicted that hydrogen forms a shallow donor in ZnO, or it may be due to the ZnI, as it was reported that electron irradiation with an energy of >1.6 MeV produces the ZnI in ZnO which is a shallow level defect at 0.03 eV below the conduction band.
