| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1684802 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2007 | 4 Pages |
Abstract
The structural relaxation of irradiated III-V compound semiconductors InP, GaAs and InAs arising from room temperature annealing has been studied using perturbed angular correlation spectroscopy. Amorphous zones were produced by MeV Ge ion implantation in single crystal substrates at liquid nitrogen temperature. These amorphous zones were found to relax continuously to a disordered state of lower energy with characteristic relaxation times of a few hours to a few days which are described by a double exponential decay function. We attribute this transformation or relaxation of amorphous to disordered material to a process akin to solid-phase-epitaxial-growth.
Keywords
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Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
R. Dogra, A.P. Byrne, L.L. Araujo, M.C. Ridgway,