| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1684981 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2007 | 4 Pages |
Abstract
We have extended measurements of the electronic sputtering yields to nitrides (Si3N4 and AlN) and oxides (Y2O3 and ZrO2) for a better understanding of the mechanism of the electronic sputtering (energy transfer from the electronic system to lattice). It appears that the present results fit to the suggested band-gap dependence [N. Matsunami, M. Sataka, A. Iwase, S. Okayasu, Nucl. Instr. and Meth. B 209 (2003) 288], indicating again that the band-gap is an important factor in the electronic sputtering and supporting the multi-exciton mechanism. Roles of bond nature (covalency and ionicity) in the electronic sputtering have been discussed.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
N. Matsunami, M. Sataka, S. Okayasu, M. Tazawa,