Focused ion beam assisted deposition of nanostructures at elevated substrate temperatures

Nanostructures of Pt, W and C have been fabricated on Si substrate by ion induced cracking of the appropriate precursor gas molecules employing Ga ions at constant beam parameters and increasing substrate temperatures. The nanopillars exhibit variation in the physical, morphological and compositional properties as a function of substrate temperature at constant ion beam parameters. These results have been tried to understand on the basis of temperature dependent sticking tendency of the gas molecules to the substrate, thermal desorption process of the adsorbed precursor gas molecules, it's interaction with the Ga ions, etc.