| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1685124 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2008 | 4 Pages |
Abstract
Layered Al2O3/HfO2 structures were deposited on Si by atomic layer deposition and the atomic transport during rapid thermal annealing was investigated by low energy ion scattering, medium energy ion scattering and narrow nuclear resonant reaction profiling. The structures were dissociated during annealing by different mechanisms, such as interdiffusion of the layers and metal loss from the dielectric. The possible detrimental effects on device electrical properties of the observed decomposition are discussed.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
L. Miotti, R.P. Pezzi, M. Copel, I.J.R. Baumvol,